![]() ![]() The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films that is, the higher value of A/B showed the higher stoichiometric properties. ![]() X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. The charge-carrier concentrations in the films decreased from 1.69 × 10 21 to 6.16 × 10 17 cm −3 with increased gas flow rate from 7 to 21 sccm. Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. ![]()
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January 2023
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